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830nm Laser Diode TO-18

830nm Laser Diode 100mW TO-Can

 

DESCRIPTION

830nm TO-Can is a GaAlAs laser diode. It is packaged in an Ø5.6 mm TO can with a C pin configuration. This laser is compatible with our line of laser diode and TEC controllers as well as our selection of laser diode mounts and collimation packages.

 

ABSOLUTE MAXIMUM RATINGS

Specification

Symbol

Maximum

Output Power, CW

Pmax

100mW

LD Reverse Voltage

VR(LD)

2.0 V

PD Reverse Voltage

VR(PD)

30V

Operating Case Temperature

Top

-10 to 50 ℃

Storage Temperature

Tstor

-40 to 80 ℃

 

Note: Absolute Maximum Rating specifications should never be exceeded. Operating at or beyond these conditions can permanently damage the laser.

 

TECHNICAL PARAMETERS (TC = 25 °C, CW)

Specification

Symbol

Min

Typical

Max

Center Wavelength @ Pop

λo

820 nm

830 nm

840 nm

Output Power, CW

Pop

-

100mW

-

Threshold Current

ITH

-

35 mA

45mA

Operating Current CW @ Pop

Iop

-

160mA

175 mA

Operating Voltage @ Pop

Vop

-

1.9V

2.2V

Slope Efficiency

Η

0.7 mW/mA

0.9 mW/mA

-

Monitor Current @ Pop

IPD

0.10 mA

0.25 mA

0.50 mA

Beam Divergence (FWHM)@ Pop

Parallel

θ

12°

Perpendicular

θ ^

18°

22°

26°

 

 

 

 

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